Characterization of Shaliow Silicided Junctions for Sub-Quartr Micron Ulsi Technology Extration of Silicidation Inuuced Schottky Contact Area

By: Material type: ArticleArticleDescription: 762- pSubject(s): In: IEEE Transactions on Electron Devices
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Articles Articles Periodical Section Vol.47, No.04 (Apr. 2000) Available