Evaluation of Radio-Frequency Performance of Gate-Ali-Around Ge/Gaas Heterojunction Tunneling Field-Effect Transistor with Hetero-Gate-Dielectric by Mixed-Mode Simulation

By: Material type: ArticleArticleDescription: 270-2078 pSubject(s): In: Journal of Electrical Engineering and Technology
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Articles Articles Periodical Section Vol.09, No.06 (Nov. 2014) Available