Hydrogen Effect on Enhancement of Defect Reactions in Semiconductors:Example for Silicon and Vacancy Defects (Record no. 775403)
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000 -LEADER | |
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fixed length control field | 00604nab a2200181Ia 4500 |
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
fixed length control field | 230808s2001 |||||||f |||| 00| 0 eng d |
100 ## - MAIN ENTRY--PERSONAL NAME | |
Personal name | Nazarov, A.N. |
9 (RLIN) | 826190 |
100 ## - MAIN ENTRY--PERSONAL NAME | |
Personal name | Pinchuk, V.M. |
9 (RLIN) | 725096 |
100 ## - MAIN ENTRY--PERSONAL NAME | |
Personal name | Yanchuk, T.V. |
9 (RLIN) | 826193 |
100 ## - MAIN ENTRY--PERSONAL NAME | |
Personal name | Lysenko, V.S. |
9 (RLIN) | 826195 |
245 #0 - TITLE STATEMENT | |
Title | Hydrogen Effect on Enhancement of Defect Reactions in Semiconductors:Example for Silicon and Vacancy Defects |
300 ## - PHYSICAL DESCRIPTION | |
Extent | 521-526 p. |
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM | |
Topical term or geographic name entry element | Silicon |
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM | |
Topical term or geographic name entry element | Vacancy Defects |
9 (RLIN) | 760406 |
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM | |
Topical term or geographic name entry element | Dopant |
9 (RLIN) | 720303 |
773 ## - HOST ITEM ENTRY | |
Place, publisher, and date of publication | 2001 |
Title | International Journal of Hydrogen Energy |
International Standard Serial Number | 03603199 |
942 ## - ADDED ENTRY ELEMENTS (KOHA) | |
Koha item type | Articles |
-- | 51 |
-- | ABUL KALAM Library |
Not for loan | Home library | Serial Enumeration / chronology | Total Checkouts | Date last seen | Koha item type |
---|---|---|---|---|---|
Engr Abul Kalam Library | Vol.26, No.05 (May. 2001) | 19/08/2023 | Articles |