A Camparison of Wave-Function Penetration Effect on Gate Capacitance in Deep Submicron N- and P-Mosfets (Record no. 772573)

MARC details
000 -LEADER
fixed length control field 00432nab a2200121Ia 4500
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 230808s2002 |||||||f |||| 00| 0 eng d
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Haque, M.N.
9 (RLIN) 809476
245 #2 - TITLE STATEMENT
Title A Camparison of Wave-Function Penetration Effect on Gate Capacitance in Deep Submicron N- and P-Mosfets
300 ## - PHYSICAL DESCRIPTION
Extent 1580-1587 p.
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Gate-Controlled -Diode
9 (RLIN) 820031
773 ## - HOST ITEM ENTRY
Place, publisher, and date of publication 2002
Title Ieee Transactions on Electron Devices
International Standard Serial Number 00189383
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type Articles
-- 51
-- ABUL KALAM Library
Holdings
Not for loan Home library Serial Enumeration / chronology Total Checkouts Date last seen Koha item type
  Engr Abul Kalam Library Vol.49, No.09 (Sep. 2002)   19/08/2023 Articles