A Viable Self-Aligned Bottom-Gate Mos Transistor Technology for Deep Submicron 3-D Sram (Record no. 760096)

MARC details
000 -LEADER
fixed length control field 00503nab a2200157Ia 4500
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 230808s2003 |||||||f |||| 00| 0 eng d
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Zhang, Shengong
9 (RLIN) 770921
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Han, Ruqi
9 (RLIN) 806650
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Huang, Ru
9 (RLIN) 779354
245 #2 - TITLE STATEMENT
Title A Viable Self-Aligned Bottom-Gate Mos Transistor Technology for Deep Submicron 3-D Sram
300 ## - PHYSICAL DESCRIPTION
Extent 1952-1960 p.
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Mosfet
9 (RLIN) 720139
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Sram
9 (RLIN) 714354
773 ## - HOST ITEM ENTRY
Place, publisher, and date of publication 2003
Title Ieee Transactions on Electron Devices
International Standard Serial Number 00189383
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type Articles
-- 51
-- ABUL KALAM Library
Holdings
Not for loan Home library Serial Enumeration / chronology Total Checkouts Date last seen Koha item type
  Engr Abul Kalam Library Vol.50, No.09 (Sep. 2003)   19/08/2023 Articles