Theoretical and Experimental Investigation of Si Nanocrystal Memory Device with Hfo2 High-K Tunneling Dielectric (Record no. 759569)

MARC details
000 -LEADER
fixed length control field 00534nab a2200157Ia 4500
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 230808s2003 |||||||f |||| 00| 0 eng d
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Lee, Jong Jin
9 (RLIN) 734073
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Wang, Xuguang
9 (RLIN) 805973
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Lu, Nan
9 (RLIN) 805974
245 #0 - TITLE STATEMENT
Title Theoretical and Experimental Investigation of Si Nanocrystal Memory Device with Hfo2 High-K Tunneling Dielectric
300 ## - PHYSICAL DESCRIPTION
Extent 2067-2072 p.
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Data Retention
9 (RLIN) 768845
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Hfo2
9 (RLIN) 801786
773 ## - HOST ITEM ENTRY
Place, publisher, and date of publication 2003
Title Ieee Transactions on Electron Devices
International Standard Serial Number 00189383
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type Articles
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-- ABUL KALAM Library
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Not for loan Home library Serial Enumeration / chronology Total Checkouts Date last seen Koha item type
  Engr Abul Kalam Library Vol.50, No.10 (Oct. 2003)   19/08/2023 Articles