High Breakdown Voltage Undoped Algan-Gan Power Hemt on Sapphire Substrate and Its Demonstration for Dc-Dc Converter Application (Record no. 756800)
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000 -LEADER | |
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fixed length control field | 00472nab a2200121Ia 4500 |
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
fixed length control field | 230808s2004 |||||||f |||| 00| 0 eng d |
100 ## - MAIN ENTRY--PERSONAL NAME | |
Personal name | Saito, Waturu |
9 (RLIN) | 791606 |
245 #0 - TITLE STATEMENT | |
Title | High Breakdown Voltage Undoped Algan-Gan Power Hemt on Sapphire Substrate and Its Demonstration for Dc-Dc Converter Application |
300 ## - PHYSICAL DESCRIPTION | |
Extent | 1913-1917 p. |
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM | |
Topical term or geographic name entry element | Solid-State Power and High Voltage |
9 (RLIN) | 797047 |
773 ## - HOST ITEM ENTRY | |
Place, publisher, and date of publication | 2004 |
Title | Ieee Transactions on Electron Devices |
International Standard Serial Number | 00189383 |
942 ## - ADDED ENTRY ELEMENTS (KOHA) | |
Koha item type | Articles |
-- | 51 |
-- | ABUL KALAM Library |
Not for loan | Home library | Serial Enumeration / chronology | Total Checkouts | Date last seen | Koha item type |
---|---|---|---|---|---|
Engr Abul Kalam Library | Vol.51, No.11 (Nov. 2004) | 19/08/2023 | Articles |