High-Power Ingan Light Emitting Diodes Grown By Molecular Beam Epitaxy (Record no. 756740)

MARC details
000 -LEADER
fixed length control field 00384nab a2200121Ia 4500
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 230808s2004 |||||||f |||| 00| 0 eng d
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Johnson, Karl
9 (RLIN) 801787
245 #0 - TITLE STATEMENT
Title High-Power Ingan Light Emitting Diodes Grown By Molecular Beam Epitaxy
300 ## - PHYSICAL DESCRIPTION
Extent 1299-1300 p.
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Optoelectronics
9 (RLIN) 91182
773 ## - HOST ITEM ENTRY
Place, publisher, and date of publication 2004
Title IET:IEE: Electronics Letters
International Standard Serial Number 00135194
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type Articles
-- 51
-- ABUL KALAM Library
Holdings
Not for loan Home library Serial Enumeration / chronology Total Checkouts Date last seen Koha item type
  Engr Abul Kalam Library Vol.40, No.20 (Sep. 2004)   19/08/2023 Articles
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