Design Optimization of High Breakdown Voltage Aigan-Gan Power Hemt on An Insulating Substrate for Ron A-Vb Tradeoff Characteristics (Record no. 753675)

MARC details
000 -LEADER
fixed length control field 00474nab a2200121Ia 4500
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 230808s2005 |||||||f |||| 00| 0 eng d
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Saito, Waturu
9 (RLIN) 791606
245 #0 - TITLE STATEMENT
Title Design Optimization of High Breakdown Voltage Aigan-Gan Power Hemt on An Insulating Substrate for Ron A-Vb Tradeoff Characteristics
300 ## - PHYSICAL DESCRIPTION
Extent 106-111 p.
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Solid-State Power and High Voltage
9 (RLIN) 797047
773 ## - HOST ITEM ENTRY
Place, publisher, and date of publication 2005
Title Ieee Transactions on Electron Devices
International Standard Serial Number 00189383
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type Articles
-- 51
-- ABUL KALAM Library
Holdings
Not for loan Home library Serial Enumeration / chronology Total Checkouts Date last seen Koha item type
  Engr Abul Kalam Library Vol.52, No.01 (Jan. 2005)   19/08/2023 Articles