Analysis and Compact Modeling of a Vertical Grounded-Base N-P-N Bipolar Transistor Used as Esd Protection in a Smart Power Technology (Record no. 741223)

MARC details
000 -LEADER
fixed length control field 00566nab a2200157Ia 4500
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 230808s2001 |||||||f |||| 00| 0 eng d
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Bertrand, Geraldine
9 (RLIN) 770770
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Delage, Christelie
9 (RLIN) 770772
245 #0 - TITLE STATEMENT
Title Analysis and Compact Modeling of a Vertical Grounded-Base N-P-N Bipolar Transistor Used as Esd Protection in a Smart Power Technology
300 ## - PHYSICAL DESCRIPTION
Extent 1373-1381 p.
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Bipolar
9 (RLIN) 768861
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Compact Modeling
9 (RLIN) 768128
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Esd
9 (RLIN) 749373
773 ## - HOST ITEM ENTRY
Place, publisher, and date of publication 2001
Title IEEE Journal of Solid-State Circuits
International Standard Serial Number 00189200
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type Articles
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-- ABUL KALAM Library
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  Engr Abul Kalam Library Vol.36, No.09 (Sep. 2001)   19/08/2023 Articles