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Linear Cofactor Difference Method of Mosfet Subthreshold Characteristics for Extracting Interface Traps Induced By Gate Oxide Stress Test

He, J. H Huang, R

Linear Cofactor Difference Method of Mosfet Subthreshold Characteristics for Extracting Interface Traps Induced By Gate Oxide Stress Test - 331-333 p.

Subjects--Topical Terms:
Mosfets
Subthreshold Logic
Linear

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