Intrinsic Fluctuation in Sub 10-Nm Double Gate Mosfet Introduced By Distcrete of Vcharge and Matter
Brown, G.J.
Intrinsic Fluctuation in Sub 10-Nm Double Gate Mosfet Introduced By Distcrete of Vcharge and Matter - 195-200 p.
Charge Asymmetric Resonance Tunneling (Cart)
Intrinsic Fluctuation in Sub 10-Nm Double Gate Mosfet Introduced By Distcrete of Vcharge and Matter - 195-200 p.
Charge Asymmetric Resonance Tunneling (Cart)