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Interface Properties of No-Annealed N2o-Grown Oxynitride

Lai, P. T. Xu, J.P. Cheng, Y.C.

Interface Properties of No-Annealed N2o-Grown Oxynitride - 2311-2314 p.

Subjects--Topical Terms:
Gate Dielectrics
Hot-Carrier
Mos Device

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